mirror of
https://github.com/CTCaer/hekate
synced 2024-12-22 19:31:12 +00:00
124 lines
5.5 KiB
C
124 lines
5.5 KiB
C
/*
|
|
* Copyright (c) 2018 naehrwert
|
|
* Copyright (c) 2020-2023 CTCaer
|
|
*
|
|
* This program is free software; you can redistribute it and/or modify it
|
|
* under the terms and conditions of the GNU General Public License,
|
|
* version 2, as published by the Free Software Foundation.
|
|
*
|
|
* This program is distributed in the hope it will be useful, but WITHOUT
|
|
* ANY WARRANTY; without even the implied warranty of MERCHANTABILITY or
|
|
* FITNESS FOR A PARTICULAR PURPOSE. See the GNU General Public License for
|
|
* more details.
|
|
*
|
|
* You should have received a copy of the GNU General Public License
|
|
* along with this program. If not, see <http://www.gnu.org/licenses/>.
|
|
*/
|
|
|
|
#ifndef _SDRAM_H_
|
|
#define _SDRAM_H_
|
|
|
|
#include <mem/emc.h>
|
|
|
|
/*
|
|
* Tegra X1/X1+ EMC/DRAM Bandwidth Chart:
|
|
*
|
|
* Note: Max BWbits = Hz x ddr x bus width x channels = Hz x 2 x 32 x 2.
|
|
* Max BWbits = Hz x ddr x bus width x channels = Hz x 2 x 64 x 1.
|
|
* Configurations supported: 1x32, 2x32, 1x64.
|
|
* x64 ram modules can be used by combining the 2 32-bit channels into one.
|
|
*
|
|
* 204.0 MHz: 3.04 <-- Tegra X1/X1+ Init/SC7 Frequency
|
|
* 408.0 MHz: 6.08
|
|
* 665.6 MHz: 9.92
|
|
* 800.0 MHz: 11.92 <-- Tegra X1/X1+ Nvidia OS Boot Frequency
|
|
* 1065.6 MHz: 15.89
|
|
* 1331.2 MHz: 19.84
|
|
* 1600.0 MHz: 23.84
|
|
* 1862.4 MHz: 27.75 <-- Tegra X1 Official Max Frequency
|
|
* 2131.2 MHz: 31.76 <-- Tegra X1+ Official Max Frequency. Not all regs have support for > 2046 MHz.
|
|
*/
|
|
|
|
enum sdram_ids_erista
|
|
{
|
|
// LPDDR4 3200Mbps.
|
|
LPDDR4_ICOSA_4GB_SAMSUNG_K4F6E304HB_MGCH = 0,
|
|
LPDDR4_ICOSA_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 1,
|
|
LPDDR4_ICOSA_4GB_MICRON_MT53B512M32D2NP_062_WT = 2, // WT:C.
|
|
|
|
LPDDR4_ICOSA_6GB_SAMSUNG_K4FHE3D4HM_MGCH = 4,
|
|
|
|
LPDDR4_ICOSA_8GB_SAMSUNG_K4FBE3D4HM_MGXX = 7, // Custom 8GB. XX: CH/CJ/CL. 7 since it can be easily applied in fuses.
|
|
};
|
|
|
|
enum sdram_ids_mariko
|
|
{
|
|
// LPDDR4X 4266Mbps.
|
|
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 3, // Replaced from Copper. Die-M. (1y-01).
|
|
LPDDR4X_AULA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 5, // Replaced from Copper. Die-M. (1y-01).
|
|
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 6, // Replaced from Copper. Die-M. (1y-01).
|
|
|
|
// LPDDR4X 3733Mbps.
|
|
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M. 1st gen. 3733Mbps.
|
|
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M.
|
|
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 10, // Die-M.
|
|
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // 4266Mbps. Die-E. D9WGB.
|
|
|
|
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M. 1st gen. 3733Mbps.
|
|
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M.
|
|
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 14, // Die-M.
|
|
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // 4266Mbps. Die-E. D9WGB.
|
|
|
|
// LPDDR4X 4266Mbps.
|
|
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03). 2nd gen. 4266Mbps.
|
|
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03).
|
|
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03). 2nd gen. 4266Mbps.
|
|
|
|
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 20, // Die-B. 1z nm. 40% lower power usage. (1z-01).
|
|
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 21, // Die-B. 1z nm. 40% lower power usage. (1z-01).
|
|
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 22, // Die-B. 1z nm. 40% lower power usage. (1z-01).
|
|
|
|
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03).
|
|
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03). 2nd gen. 4266Mbps.
|
|
|
|
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
|
|
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
|
|
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
|
|
|
|
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A.
|
|
|
|
LPDDR4X_UNK0_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 29, // Die-M. 1a nm. 61% lower power usage. (1a-01).
|
|
LPDDR4X_UNK1_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 30, // Die-M. 1a nm. 61% lower power usage. (1a-01).
|
|
LPDDR4X_UNK2_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 31, // Die-M. 1a nm. 61% lower power usage. (1a-01).
|
|
|
|
LPDDR4X_UNK0_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // 1a nm. 61% lower power usage. (1a-01).
|
|
LPDDR4X_UNK1_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // 1a nm. 61% lower power usage. (1a-01).
|
|
LPDDR4X_UNK2_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // 1a nm. 61% lower power usage. (1a-01).
|
|
};
|
|
|
|
enum sdram_codes_mariko
|
|
{
|
|
LPDDR4X_NO_PATCH = 0,
|
|
LPDDR4X_UNUSED = 0,
|
|
|
|
// LPDDR4X_4GB_SAMSUNG_K4U6E3S4AM_MGCJ DRAM IDs: 08, 12.
|
|
// LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLHR_NME DRAM IDs: 10, 14.
|
|
|
|
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 1, // DRAM IDs: 09, 13.
|
|
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE = 2, // DRAM IDs: 11, 15.
|
|
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 3, // DRAM IDs: 17, 19, 24.
|
|
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 4, // DRAM IDs: 18, 23, 28.
|
|
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 5, // DRAM IDs: 20, 21, 22.
|
|
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
|
|
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
|
|
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 8, // DRAM IDs: 29, 30, 31.
|
|
LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB = 9, // DRAM IDs: 32, 33, 34.
|
|
};
|
|
|
|
void sdram_init();
|
|
void *sdram_get_params_patched();
|
|
void *sdram_get_params_t210b01();
|
|
void sdram_lp0_save_params(const void *params);
|
|
emc_mr_data_t sdram_read_mrx(emc_mr_t mrx);
|
|
|
|
#endif
|