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bdk: dram: add FPGA code for 3rd gen micron

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CTCaer 2024-02-16 15:54:22 +02:00
parent 05f4c42a2d
commit 644747230c
2 changed files with 5 additions and 5 deletions
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6
bdk/mem/sdram.h
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@ -100,9 +100,9 @@ enum sdram_ids_mariko
LPDDR4X_HOAG_4GB_HYNIX_H54G46CYRBX267 = 30, // Die-C. (1a-01). 61% lp. LPDDR4X_HOAG_4GB_HYNIX_H54G46CYRBX267 = 30, // Die-C. (1a-01). 61% lp.
LPDDR4X_AULA_4GB_HYNIX_H54G46CYRBX267 = 31, // Die-C. (1a-01). 61% lp. LPDDR4X_AULA_4GB_HYNIX_H54G46CYRBX267 = 31, // Die-C. (1a-01). 61% lp.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // Die-B. (1a-01). 61% lp. LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // Die-B. (1a-01). D8BQM. 61% lp.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // Die-B. (1a-01). 61% lp. LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // Die-B. (1a-01). D8BQM. 61% lp.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // Die-B. (1a-01). 61% lp. LPDDR4X_AULA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // Die-B. (1a-01). D8BQM. 61% lp.
}; };
enum sdram_codes_mariko enum sdram_codes_mariko

4
bdk/mem/sdram_config.inl
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@ -434,9 +434,9 @@ static const sdram_params_t210_t _dram_cfg_0_samsung_4gb = {
.emc_dll_cfg0 = 0x1F13412F, .emc_dll_cfg0 = 0x1F13412F,
.emc_dll_cfg1 = 0x00010014, .emc_dll_cfg1 = 0x00010014,
.emc_pmc_scratch1 = 0x4FAFFFFF, .emc_pmc_scratch1 = 0x4FAFFFFF, // APBDEV_PMC_IO_DPD3_REQ.
.emc_pmc_scratch2 = 0x7FFFFFFF, .emc_pmc_scratch2 = 0x7FFFFFFF,
.emc_pmc_scratch3 = 0x4006D70B, .emc_pmc_scratch3 = 0x4006D70B, // APBDEV_PMC_DDR_CNTRL.
.emc_pmacro_pad_cfg_ctrl = 0x00020000, .emc_pmacro_pad_cfg_ctrl = 0x00020000,
.emc_pmacro_vttgen_ctrl0 = 0x00030808, .emc_pmacro_vttgen_ctrl0 = 0x00030808,