hekate/bdk/mem/sdram.h

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/*
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* Copyright (c) 2018 naehrwert
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* Copyright (c) 2020-2024 CTCaer
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*
* This program is free software; you can redistribute it and/or modify it
* under the terms and conditions of the GNU General Public License,
* version 2, as published by the Free Software Foundation.
*
* This program is distributed in the hope it will be useful, but WITHOUT
* ANY WARRANTY; without even the implied warranty of MERCHANTABILITY or
* FITNESS FOR A PARTICULAR PURPOSE. See the GNU General Public License for
* more details.
*
* You should have received a copy of the GNU General Public License
* along with this program. If not, see <http://www.gnu.org/licenses/>.
*/
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#ifndef _SDRAM_H_
#define _SDRAM_H_
#include <mem/emc.h>
/*
* Tegra X1/X1+ EMC/DRAM Bandwidth Chart:
*
* Note: Max BWbits = Hz x ddr x bus width x channels = Hz x 2 x 32 x 2.
* Max BWbits = Hz x ddr x bus width x channels = Hz x 2 x 64 x 1.
* Configurations supported: 1x32, 2x32, 1x64.
* x64 ram modules can be used by combining the 2 32-bit channels into one.
*
* 204.0 MHz: 3.04 <-- Tegra X1/X1+ Init/SC7 Frequency
* 408.0 MHz: 6.08
* 665.6 MHz: 9.92
* 800.0 MHz: 11.92 <-- Tegra X1/X1+ Nvidia OS Boot Frequency
* 1065.6 MHz: 15.89
* 1331.2 MHz: 19.84
* 1600.0 MHz: 23.84
* 1862.4 MHz: 27.75 <-- Tegra X1 Official Max Frequency
* 2131.2 MHz: 31.76 <-- Tegra X1+ Official Max Frequency. Not all regs have support for > 2046 MHz.
*/
enum sdram_ids_erista
{
// LPDDR4 3200Mbps.
LPDDR4_ICOSA_4GB_SAMSUNG_K4F6E304HB_MGCH = 0, // Die-B. (2y-01).
LPDDR4_ICOSA_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 1, // Die-M. (2y-01).
LPDDR4_ICOSA_4GB_MICRON_MT53B512M32D2NP_062_WTC = 2, // Die-C. (2y-01).
LPDDR4_ICOSA_6GB_SAMSUNG_K4FHE3D4HM_MGCH = 4, // Die-C. (2y-01).
/*
* Custom hekate/L4T supported 8GB. 7 dram id can be easily applied in fuses.
*
* 4GB modules:
* Samsung K4FBE3D4HM-MGCH/CJ/CL. MG/TF/GF/TH/GH: Package + Temperature.
* Hynix H9HCNNNCPUMLXR-NME/NEE/NEI. E/I: Temperature.
* Hynix H54G56BYYVX046/QX046/PX046. V/Q/P: Package + Temperature.
*/
LPDDR4_ICOSA_8GB_SAMSUNG_K4FBE3D4HM_MGXX = 7, // XX: CH/CJ/CL.
};
enum sdram_ids_mariko
{
/*
* Nintendo Switch LPDRR4X generations:
* - 1x nm are 1st-gen
* - 1y nm are 2nd-gen
* - 1z/a nm are 3rd-gen
*/
// LPDDR4X 4266Mbps.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 3, // Die-M. (1y-01).
LPDDR4X_AULA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 5, // Die-M. (1y-01).
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 6, // Die-M. (1y-01).
// LPDDR4X 3733Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M. (1x-03).
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M. (1x-03).
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 10, // Die-M. (1x-03).
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // Die-E. (1x-03). D9WGB. 4266Mbps.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M. (1x-03).
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M. (1x-03).
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 14, // Die-M. (1x-03).
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // Die-E. (1x-03). D9WGB. 4266Mbps.
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03).
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03).
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03).
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 20, // Die-B. (1z-01). 40% lp.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 21, // Die-B. (1z-01). 40% lp.
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 22, // Die-B. (1z-01). 40% lp.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03).
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03).
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // Die-F. (1y-01). D9XRR.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // Die-F. (1y-01). D9XRR.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // Die-F. (1y-01). D9XRR.
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A. (1y-X03). 2nd gen.
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// Old naming scheme: H9HCNNNBKMCLXR-NEE
LPDDR4X_IOWA_4GB_HYNIX_H54G46CYRBX267 = 29, // Die-C. (1a-01). 61% lp.
LPDDR4X_HOAG_4GB_HYNIX_H54G46CYRBX267 = 30, // Die-C. (1a-01). 61% lp.
LPDDR4X_AULA_4GB_HYNIX_H54G46CYRBX267 = 31, // Die-C. (1a-01). 61% lp.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // Die-B. (1a-01). D8BQM. 61% lp.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // Die-B. (1a-01). D8BQM. 61% lp.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // Die-B. (1a-01). D8BQM. 61% lp.
};
enum sdram_codes_mariko
{
LPDDR4X_NO_PATCH = 0,
LPDDR4X_UNUSED = 0,
// LPDDR4X_4GB_SAMSUNG_K4U6E3S4AM_MGCJ DRAM IDs: 08, 12.
// LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLHR_NME DRAM IDs: 10, 14.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 1, // DRAM IDs: 09, 13.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE = 2, // DRAM IDs: 11, 15.
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 3, // DRAM IDs: 17, 19, 24.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 4, // DRAM IDs: 18, 23, 28.
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 5, // DRAM IDs: 20, 21, 22.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
LPDDR4X_4GB_HYNIX_H54G46CYRBX267 = 8, // DRAM IDs: 29, 30, 31.
LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB = 9, // DRAM IDs: 32, 33, 34.
};
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void sdram_init();
void *sdram_get_params_patched();
void *sdram_get_params_t210b01();
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void sdram_lp0_save_params(const void *params);
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void sdram_src_pllc(bool enable);
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emc_mr_data_t sdram_read_mrx(emc_mr_t mrx);
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#endif